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Low-noise S-band amplifier
Potěšil, Dušan ; Vágner, Petr (referee) ; Kasal, Miroslav (advisor)
This work deals with design, simulation and realisation of a receiving systém of an S-band front end for satellite communication. The first part of the project is designed the low noise amplifier (LNA) with high associated gain. The basic point of the design is choice of the active device. In the present time are available the ultra low noise transistors based on the GaAs with high mobility electron. The two-stage LNA has been designed with Agilent ATF-55143. It is pseudomorphic HEMTs ,which work in an enhancement mode.These transistor do not require a negative bias voltage and have extremely good typical noise figure. The design includes an interdigital tuned band pass filter between stages. The second part of the project is search another way design circuit. There are designed two LNA with paralel coupled line filter. The first has been applied on a PTFE substrate Duroid 5880 with relative permitivity 2,2 and tg d = 0,009. The substrate FR-4 (r = 4.34) with the thickness 0.06” was used for the realization.
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Power audio amplifier used for laboratory measurements
Herceg, Erik ; Petržela, Jiří (referee) ; Kratochvíl, Tomáš (advisor)
This Bachelor thesis deals with the scheme of low-frequency amplifier in AB class which is going to be used for laboratory measurement. The scheme was realized with semiconductor components and the power part of the amplifier was made of bipolar transistor. The main part of the work was focused on the measurement protocol. The functionality of the amplifier was verified and simulated in the theoretical way and met the criteria. The form of the measurement protocol was realized in agreement with instructions and contains all the required parameters of the measurement. The objective of this thesis is to explain how to design an amplifier and to illustrate the measurment methods of its parameters
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Antenna Preamplifier For Emi Measurements
Sedlák, Milan
The contribution deals with the design of a low-noise amplifier with frequency band from 30 MHz to 1 GHz, usable for measuring and testing electromagnetic interferences in EMC test room. The main task of the low-noise amplifier is to improve sensitivity of the measurement chain which allows measurement of the undesired emission of high frequency signals at a very low power level.
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Power audio amplifier used for laboratory measurements
Herceg, Erik ; Petržela, Jiří (referee) ; Kratochvíl, Tomáš (advisor)
This Bachelor thesis deals with the scheme of low-frequency amplifier in AB class which is going to be used for laboratory measurement. The scheme was realized with semiconductor components and the power part of the amplifier was made of bipolar transistor. The main part of the work was focused on the measurement protocol. The functionality of the amplifier was verified and simulated in the theoretical way and met the criteria. The form of the measurement protocol was realized in agreement with instructions and contains all the required parameters of the measurement. The objective of this thesis is to explain how to design an amplifier and to illustrate the measurment methods of its parameters
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Low-noise S-band amplifier
Potěšil, Dušan ; Vágner, Petr (referee) ; Kasal, Miroslav (advisor)
This work deals with design, simulation and realisation of a receiving systém of an S-band front end for satellite communication. The first part of the project is designed the low noise amplifier (LNA) with high associated gain. The basic point of the design is choice of the active device. In the present time are available the ultra low noise transistors based on the GaAs with high mobility electron. The two-stage LNA has been designed with Agilent ATF-55143. It is pseudomorphic HEMTs ,which work in an enhancement mode.These transistor do not require a negative bias voltage and have extremely good typical noise figure. The design includes an interdigital tuned band pass filter between stages. The second part of the project is search another way design circuit. There are designed two LNA with paralel coupled line filter. The first has been applied on a PTFE substrate Duroid 5880 with relative permitivity 2,2 and tg d = 0,009. The substrate FR-4 (r = 4.34) with the thickness 0.06” was used for the realization.
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